LNA Mobility Transmitter Released By Mitsubishi Electric

Mitsubishi Electric Corporation has developed a full-mold package low noise GaAs high electron mobility transistor (HEMT), the MGF4921AM, highly suitable for low noise amplifiers in satellite digital radio reception systems. This product can also be used in low noise amplifiers for C-band direct broadcast satellite (DBS) reception systems, with shipments to start on January 26, 2009.

Mitsubishi Electric will begin shipment of a HEMT with low noise characteristics that are top-level in the industry at a wide range of frequency waves from S- to C-bands. By optimizing gate width and by improving stability at low frequency bands, Mitsubishi Electric has improved device noise figure to 0.35 dB, an industry top-level low noise characteristic and 0.1 dB lower than the company’s 12 GHz model, the MGF4953A, when measured at 2.4 GHz on a stable matching circuit. Using this product in the first stage of amplifiers, which strictly requires low noise characteristics, improves sensitivity in reception converters for satellite digital radios, helping to expand radio coverage area and decrease production costs in reception converters. The MGF4921AM has an industry standard 4-pin full-mold package. An unchanged foot pattern from the previous model will shorten development periods for satellite communication equipment manufacturers. Mitsubishi Electric will increase its lineup of low noise GaAs HEMTs for the second and third stage in amplifiers with improvements in output power and distortion characteristics.